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Triplet-singlet relaxation in semiconductor single and double quantum dots

2007/08/31 by K. Shen, M. W. Wu · 1 citation
Engineering · Physics and Astronomy · #Atomic physics #Condensed matter physics #Coulomb #Electron #Excited state #Magnetic field #Physics #Quantum and electron transport phenomena #Quantum dot #Quantum mechanics #Quantum point contact #Quantum well #Relaxation (psychology) #Semiconductor Quantum Structures and Devices #Semiconductor materials and devices #Singlet state #Spin (aerodynamics) #Triplet state #cond-mat.mes-hall #cond-mat.mtrl-sci

paper · pdf · doi:10.1103/physrevb.76.235313

published as Phys. Rev. B 76, 235313 (2007). · 7 pages, 4 figures, PRB in press

arxiv created 2007/11/27 · openalex publication_date 2007/12/17 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05

Abstract

We study the triplet-singlet relaxation in two-electron semiconductor quantum dots. Both single dots and vertically coupled double dots are discussed. In our work, the electron-electron Coulomb interaction, which plays an important role in the electronic structure, is included. The spin mixing is caused by spin-orbit coupling which is the key to the triplet-singlet relaxation. We show that the selection rule widely used in the literature is incorrect unless near the crossing and/or anticrossing point in single quantum dots. The triplet-singlet relaxation in double quantum dots can be markedly changed by varying barrier height, interdot distance, external magnetic field, and dot size.

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