Strongly enhanced effective mass in dilute two-dimensional electron systems: System-independent origin

2007/06/30 by A. A. Shashkin, A. A. Kapustin, E. V. Deviatov +2
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Quantum and electron transport phenomena #Semiconductor materials and devices #cond-mat.str-el

paper · pdf · doi:10.1103/physrevb.76.241302

published as Phys. Rev. B 76, 241302(R) (2007) · As published

arxiv created 2007/11/21 · openalex publication_date 2007/12/10 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

We measure the effective mass in a dilute two-dimensional electron system in (111) silicon by analyzing the temperature dependence of the Shubnikov--de Haas oscillations in the low-temperature limit. A strong enhancement of the effective mass with decreasing electron density is observed. The mass renormalization as a function of the interaction parameter r_s is in good agreement with that reported for (100) silicon, which shows that the relative mass enhancement is system and disorder independent, being determined by electron-electron interactions only.

Citations

• Metal–insulator transition in two-dimensional electron systems
• Density-dependent spin susceptibility and effective mass in interacting quasi-two-dimensional electron systems
• Shubnikov-de Haas oscillations near the metal–insulator transition in a two-dimensional electron system in silicon
• Metal-Insulator Transition in Disordered Two-Dimensional Electron Systems
• On the Interaction of Electrons in Metals
• Sharp increase of the effective mass near the critical density in a metallic two-dimensional electron system