2003/02/01 by Tibor Grasser, Ting-wei Tang, Hans Kosina +1 · 2 citations
Engineering · Mathematics · #Advancements in Semiconductor Devices and Circuit Design #Gas Dynamics and Kinetic Theory #Lattice Boltzmann Simulation Studies
paper · doi:10.1109/jproc.2002.808150
openalex publication_date 2003/02/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/15
Since Stratton published his famous paper four decades ago, various transport models have been proposed which account for the average carrier energy or temperature in one way or another. The need for such transport models arose because the traditionally used drift-diffusion model cannot capture nonlocal effects which gained increasing importance in modern miniaturized semiconductor devices. In the derivation of these models from Boltzmann's transport equation, several assumptions have to be made in order to obtain a tractable equation set. Although these assumptions may differ significantly, the resulting final models show various similarities, which has frequently led to confusion. We give a detailed review on this subject, highlighting the differences and similarities between the models, and we shed some light on the critical issues associated with higher order transport models.