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Enhancement of electronic inhomogeneities due to out-of-plane disorder inBi2Sr2CuO6+δsuperconductors observed by scanning tunneling spectroscopy

2006/09/14 by Akira Sugimoto, A. Sugimoto, S. Kashiwaya +10
Materials Science · Physics and Astronomy · #Advanced Condensed Matter Physics #Computer science #Condensed matter physics #Cuprate #Doping #Homojunction #Ion #Ionic radius #Iron-based superconductors research #Materials science #Physics #Physics of Superconductivity and Magnetism #Pseudogap #Quantum mechanics #RADIUS #Scanning tunneling microscope #Superconductivity #cond-mat.supr-con

paper · pdf · doi:10.1103/physrevb.74.094503

published as Phys. Rev. B 74, 094503 (2006) · 5 pages, 4 figures; to be published in Phys. Rev. B

openalex publication_date 2006/09/14 · arxiv created 2006/09/15 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05

Abstract

Nanoscale electronic inhomogeneity in optimally doped single-layer Bi2Sr1.6L0.4CuO_6+\ensuremathδ, (L-Bi2201, L=La and Gd) as well as bilayer Bi2Sr2CaCu2O_8+\ensuremathδ (Bi2212), superconductors has been investigated by the low-temperature scanning-tunneling-microscopy and spectroscopy. The inhomogeneous gap structures are observed above and below Tc on Gd-Bi2201. Increasing the out-of-plane disorder which is controlled by mismatch of the ionic radius between Sr and Ln results in the enhancement of pseudogap region with suppressed coherence peaks in the conductance spectrum, making the gap average larger and the gap distribution wider. The degree of electronic inhomogeneity measured by the distribution width of the gap amplitude is shown to have a correlation with Tc in optimally doped Bi2201 and Bi2212.

Citations