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Electron-phonon correlation effects in molecular transistors

2006/05/31 by C. A. Balseiro, Pablo S. Cornaglia, P. S. Cornaglia +1
Engineering · Physics and Astronomy · #Molecular Junctions and Nanostructures #Quantum and electron transport phenomena #Semiconductor materials and devices #cond-mat.mes-hall #cond-mat.str-el

paper · pdf · doi:10.1103/physrevb.74.235409

published as Phys. Rev. B 74, 235409 (2006) · 6 pages, 4 figures

openalex publication_date 2006/12/07 · arxiv created 2006/12/08 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

The interplay of electron-electron and electron-phonon interactions is studied analytically in the Kondo regime. A Holstein electron-phonon coupling is shown to produce a weakening of the gate voltage dependence of the Kondo temperature and may explain the observed anomalies in some of these devices. A molecular center-of-mass mode opens a new channel for charge and spin fluctuations and in the antiadabatic limit the latter are described by an asymmetric two-channel Kondo model. Below the Kondo temperature the system develops a dynamical Jahn-Teller distortion and a low energy peak emerges in the phonon spectral density that could be observed in Raman microscopy experiments.

Citations