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AgInS2–ZnS Quantum Dots: Excited State Interactions with TiO2 and Photovoltaic Performance

2017/02/03 by Steven M. Kobosko, Danilo H. Jara, Prashant V. Kamat · 2 citations
Materials Science · Engineering · Energy · #Quantum Dots Synthesis And Properties #Chalcogenide Semiconductor Thin Films #Advanced Photocatalysis Techniques

paper · doi:10.1021/acsami.6b14604

openalex publication_date 2017/02/03 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/01

Abstract

Multinary quantum dots such as AgInS 2 and alloyed AgInS 2 –ZnS are an emerging class of semiconductor materials for applications in photovoltaic and display devices. The nanocrystals of (AgInS 2 ) x –(ZnS) 1– x (for x = 0.67) exhibit a broad emission with a maximum at 623 nm and interact strongly with TiO 2 nanostructures by injecting electrons from the excited state. The electron transfer rate constant as determined from transient absorption spectroscopy was 1.8 × 10 10 s –1 . The photovoltaic performance was evaluated over a period of a few weeks to demonstrate the stability of AgInS 2 –ZnS when utilized as sensitizers in solar cells. We report a power conversion efficiency of 2.25% of our champion cell 1 month after its fabrication. The limitations of AgInS 2 –ZnS nanocrystals in achieving greater solar cell efficiency are discussed.

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