2017/08/25 by Gary Zaiats, Shingo Ikeda, Sachin Kinge +1 · 1 citation
Engineering · Materials Science · Physics and Astronomy · #Chalcogenide Semiconductor Thin Films #Quantum Dots Synthesis And Properties #Semiconductor Quantum Structures and Devices
paper · pdf · doi:10.1021/acsami.7b07893
openalex publication_date 2017/08/25 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/01
High Resolution Image Download MS PowerPoint Slide Multinary semiconductor nanoparticles such as CuInS 2, AgInS 2, and the corresponding alloys with ZnS hold promise for designing future quantum dot light-emitting devices (QLED). The QLED architectures require matching of energy levels between the different electron and hole transport layers. In addition to energy level alignment, conductivity and charge transfer interactions within these layers determine the overall efficiency of QLED. By employing CuInS 2 –ZnS QDs we succeeded in fabricating red-emitting QLED using two different hole-transporting materials, polyvinylcarbazole and poly(4-butylphenyldiphenylamine). Despite the similarity of the HOMO–LUMO energy levels of these two hole transport materials, the QLED devices exhibit distinctly different voltage dependence. The difference in onset voltage and excited state interactions shows the complexity involved in selecting the hole transport materials for display devices.