Fe implanted ferromagnetic ZnO

2005/12/13 by K. Potzger, К. Potzger, Shengqiang Zhou +14 · 3 citations
Materials Science · Physics and Astronomy · #Copper-based nanomaterials and applications #Electronic and Structural Properties of Oxides #ZnO doping and properties #cond-mat.mtrl-sci

paper · pdf · doi:10.1063/1.2169912

published as Appl. Phys. Lett. 88, 052508 (2006) · 13 pages, 2 figs, to be published in Appl. Phys. Lett

arxiv created 2005/12/13 · openalex publication_date 2006/01/30 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

Room-temperature ferromagnetism has been induced within ZnO single crystals by implant doping with Fe ions. For an implantation temperature of 623 K and an ion fluence of 4×1016cm−2, very tiny Fe particles, formed inside the host matrix, are responsible for the ferromagnetic properties. They were identified using synchrotron x-ray diffraction and Mössbauer spectroscopy. On the other hand, Fe ions implanted at a temperature of 253 K and an ion fluence of 4×1015cm−2 are incorporated into the host matrix and develop a room temperature diluted magnetic semiconductor.

Citations

• Elements of X-Ray Diffraction

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