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Spin susceptibility of a two-dimensional electron system in GaAs towards the weak interaction region

2005/11/28 by Yan‐Wen Tan, Y. -W. Tan, J. Zhu +6 · 3 citations
Physics and Astronomy · #Condensed matter physics #Electron #Magnetic properties of thin films #Materials science #Physics #Quantum and electron transport phenomena #Quantum mechanics #Semiconductor Quantum Structures and Devices #Spin (aerodynamics) #cond-mat.mes-hall

paper · pdf · doi:10.1103/physrevb.73.045334

Submitted to Physical Review B

arxiv created 2005/11/28 · openalex publication_date 2006/01/31 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05

Abstract

We determine the spin susceptibility \ensuremathχ in the weak interaction regime of a tunable, high quality, two-dimensional electron system in a GaAs∕AlGaAs heterostructure. The band structure effects, modifying mass and g-factor, are carefully taken into accounts since they become appreciable for the large electron densities of the weak interaction regime. When properly normalized, \ensuremathχ decreases monotonically from 3 to 1.1 with increasing density over our experimental range from 0.1 to 4\ifmmode×\else\texttimes\fi1011\phantom\rule0.3em0excm^\ensuremath-2. In the high density limit, \ensuremathχ tends correctly towards \ensuremathχ\ensuremath→1 and compare well with recent theory.

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