2018/01/01 by Xin Yu Zhou, Shao Yong Zheng, Wing Shing Chan +2 · 81 citations
Engineering · Physics and Astronomy · #Acoustics #Advanced Power Amplifier Design #Amplifier #CMOS #Electrical engineering #Electronic engineering #Engineering #GaN-based semiconductor devices and materials #Gallium nitride #Harmonic #High-electron-mobility transistor #Materials science #Optoelectronics #Physics #Radio Frequency Integrated Circuit Design #Transistor #Voltage #Waveform #Wideband
paper · doi:10.1109/tmtt.2017.2784811
published in IEEE Transactions on Microwave Theory and Techniques 66(4), 1951-1963 (IEEE Microwave Theory and Techniques Society)
openalex publication_date 2018/01/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/18
In this paper, an asymmetric drain biased postmatching Doherty power amplifier (DPA) using harmonic injection is proposed for further back-off extension. The injected harmonic components are generated by the two active devices. Aided by the proposed harmonic injection network, drain waveform amplitude modulation for both devices can be achieved at saturation, which results in enhanced saturated power for both carrier and peaking devices, while carrier back-off power remains unchanged. As a consequence, the back-off region is extended. Moreover, the power utilization factor of the asymmetric drain biased DPA is also improved. A DPA for wideband code-division multiple access systems was designed and fabricated based on commercially available gallium nitride HEMT (Cree CGH 40010F) devices to validate the proposed technique. Measured results of the proposed DPA demonstrated that operation at 10-dB back off is possible between 1.6 and 1.9 GHz, with efficiency better than 46%.