A 77-GHz CMOS Power Amplifier With a Parallel Power Combiner Based on Transmission-Line Transformer

2013/05/15 by Juntaek Oh, Bonhyun Ku, Bon‐Hyun Ku +1 · 3 citations
Engineering · #Radio Frequency Integrated Circuit Design #Advanced Power Amplifier Design #Microwave Engineering and Waveguides

paper · doi:10.1109/tmtt.2013.2261087

Abstract

This paper presents a 77-GHz CMOS power amplifier (PA) with a parallel power combiner based on a transmission-line transformer (TLT). An inter-stage matched cascode power cell structure is applied to obtain high output power and efficiency, where a simple matching network between the common-gate and common-source stage is introduced. The parallel power combiner based on a broadside-coupled TLT is analyzed and compared with a series power combiner. The PA is fabricated using a 65-nm RF CMOS process. It achieves the saturated output power of 15.8 dBm, the power-added efficiency of 15.2%, and the power gain of 20.9 dB with a supply voltage of 2.0 V at 77 GHz.

Citations

• Two-Way Current-Combining W-Band Power Amplifier in 65-nm CMOS

Cited by

• Analysis and Design of Multi-Stacked FET Power Amplifier With Phase-Compensation Inductors in Millimeter-Wave Band
• A High-Efficiency 142–182-GHz SiGe BiCMOS Power Amplifier With Broadband Slotline-Based Power Combining Technique
• A 211-to-263-GHz Dual-LC-Tank-Based Broadband Power Amplifier With 14.7-dBm P SAT and 16.4-dB Peak Gain in 130-nm SiGe BiCMOS

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