2005/04/29 by C. Fricke, M. Rogge, M. C. Rogge +5
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Charge (physics) #Condensed matter physics #Coulomb blockade #Electron #Magnetic field #Physics #Quantum and electron transport phenomena #Quantum dot #Quantum dot laser #Quantum mechanics #Quantum point contact #Quantum tunnelling #Quantum well #Semiconductor Quantum Structures and Devices #Spin (aerodynamics) #Voltage #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevb.72.193302
published as Phys. Rev. B 72, 193302 (2005) · 4 pages, 5 figures
arxiv created 2005/04/29 · openalex publication_date 2005/11/07 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
We demonstrate electron redistribution caused by magnetic field on a single quantum dot measured by means of a quantum point contact as noninvasive detector. Our device, which is fabricated by local anodic oxidation, allows us to control independently the quantum point contact and all tunneling barriers of the quantum dot. Thus we are able to measure both the change of the quantum dot charge and also changes of the electron configuration at constant number of electrons on the quantum dot. We use these features to exploit the quantum dot in a high magnetic field where transport through the quantum dot displays the effects of Landau shells and spin blockade. We confirm the internal rearrangement of electrons as function of the magnetic field for a fixed number of electrons on the quantum dot.