2022/07/21 by Yaxin Ding, Peng Yuan, Jie Yu +10 · 21 citations
Engineering · Neuroscience · #Advanced Memory and Neural Computing #Computer science #Electrical engineering #Engineering #Ferroelectric and Negative Capacitance Devices #Natural bond orbital #Neuroscience and Neural Engineering #Physics #Quantum mechanics #Topology (electrical circuits)
paper · doi:10.1109/ted.2022.3191988
published in IEEE Transactions on Electron Devices 69(9), 5391-5394 (Institute of Electrical and Electronics Engineers)
openalex publication_date 2022/07/21 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/29
Two-terminal volatile NbOx-based threshold switching memristor devices with electrical self-oscillation behavior have attracted tremendous interest for applications in both oscillators and neural networks. However, the forming process of NbOxdevices can be a burden and limit their application. In this study, a forming-free NbOx-based threshold switching device is obtained by reducing the oxygen content of the NbOxfilm, which simplifies the circuit design of the NbOxdevice array and improves the device-to-device (D2D) uniformity due to the removal of the forming step. Furthermore, a low-threshold switching voltage is achieved in the forming-free device, indicating a low-power consumption operation. Finally, we demonstrate a low-energy-consumption artificial spiking afferent nerve based on a forming-free NbOxdevice for spiking neural network (SNN) applications.