2025/08/23 by Jiaqi Yan, Liyufen Dai, Mingkai Tang +5 · 1 citation
Engineering · Materials Science · Neuroscience · Psychology · #Advanced Memory and Neural Computing #Computer science #Conducting polymers and applications #Dielectric #Electrical engineering #Electronic engineering #Engineering #Ferroelectric and Negative Capacitance Devices #Ferroelectricity #Heterojunction #Materials science #Memristor #Nanotechnology #Neuroscience #Optoelectronics #Psychology #Synapse #Telecommunications #Throughput #Wireless
paper · doi:10.1109/ted.2025.3599826
openalex publication_date 2025/08/23 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/29
Ferroelectrics offer promising potential for nonvolatile memory and neuromorphic computing. However, conventional ferroelectric diodes are fundamentally limited by low on/off ratios and are hard to achieve multiple resistance states. Covering a dielectric layer on a ferroelectric layer to construct ferroelectric–dielectric heterostructure may enables gradual resistive switching (RS) with enhanced on/off ratios. Nevertheless, this approach requires the precise screening of dielectric layer thickness, which is often labor-intensive and potentially erroneous conclusions. Here, we propose a high-throughput strategy for screening the thickness of the dielectric layer in ferroelectric–dielectric heterostructure memristors. Taking Pb(Zr0.2Ti0.8)O3(PZT)–SrTiO3(STO) heterostructure as model system, we successfully screened the heterostructure memristors with a 22.4-nm STO film that achieve robust nonvolatile retention. Furthermore, the heterostructure memristor with a 9.6-nm STO film was screened as a robust artificial synapse with 91.63% recognition accuracy. This work provides a practical strategy for screening functional heterostructures and offers an experimental reference for designing memristors.