2024/05/17 by C. Ferreyra, Ferreyra, C., Miguel Badillo +9
Engineering · #Advanced Memory and Neural Computing #Applied Physics (physics.app-ph) #FOS: Physical sciences #Ferroelectric and Negative Capacitance Devices #Semiconductor materials and devices
paper · pdf · doi:10.48550/arxiv.2405.10909
openalex publication_date 2024/05/17 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Memristors are considered key building blocks for the development of neuromorphic computing hardware. For ferroelectric memristors with a capacitor-like structure, the polarization direction modulates the height of the Schottky barriers -- present at ferroelectric/metal interfaces -- that control the device resistance. Here, we unveil the coexistence of multiple memristive mechanisms in Pt/Ca:HfO2/Pt devices fabricated on silicon by a simple and effective low-toxicity chemical solution method. Depending on the fabrication conditions, either dielectric or ferroelectric devices are obtained, each one presenting a distinct memristive response. The devices are forming-free and can sustain ferroelectric switching and memristive behavior simultaneously. Aided by numerical simulations, we describe this behavior as a competition of different mechanisms, including the effect of the ferroelectric polarization on Schottky interfaces and oxygen vacancy electromigration. Finally, we propose a simple learning algorithm for time-series recognition, designed to take advantage of the resistance relaxations present in the case of the ferroelectric devices.