Crossbar RRAM Arrays: Selector Device Requirements During Write Operation

2014/06/19 by Sungho Kim, Jiantao Zhou, Wei Lü +1 · 12 citations
Engineering · Materials Science · #Advanced Memory and Neural Computing #Ferroelectric and Negative Capacitance Devices #Electronic and Structural Properties of Oxides

paper · doi:10.1109/ted.2014.2327514

Abstract

A comprehensive analysis of write operations (SET and RESET) in a resistance-change memory (resistive random access memory) crossbar array is carried out. Three types of resistive switching memory cells-nonlinear, rectifying-SET, and rectifying-RESET-are compared with each other in terms of voltage delivery, current delivery, and power consumption. Two different write schemes, V/2 and V/3, were considered, and the V/2 write scheme is preferred due to much lower power consumption. A simple numerical method was developed that simulates entire current flows and node voltages within a crossbar array and provides a quantitative tool for the accurate analysis of crossbar arrays and guidelines for developing reliable write operation.

Citations

• RRAM Crossbar Array With Cell Selection Device: A Device and Circuit Interaction Study

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