2025/01/01 by Marwa Belhaj, Elyes Bel Hadj Jrad, Jan Grym +2 · 1 citation
Materials Science · Physics and Astronomy · Engineering · #Ga2O3 and related materials #GaN-based semiconductor devices and materials #Gas Sensing Nanomaterials and Sensors
paper · doi:10.1109/ted.2024.3520547
This article presents a convenient method for fabricating hybrid heterojunctions using poly (N-vinylcarbazole) (PVK) and a 1-D zinc oxide nanorod (ZnO NR) array for photodetector (PD) development. In this context, PVK and ZnO NRs were employed as electron donor and acceptor, respectively. First, ZnO NRs were hydrothermally synthesized through a two-step procedure at low temperatures on an n-type silicon substrate. Ohmic contacts were integrated by incorporating graphite and eutectic In-Ga (eGaIn) in to the PVK film and Si substrate, respectively. The eGaIn/Si/ZnO NRs/PVK/graphite PD structures’ fundamental electrical parameters were extracted from the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">I</tex-math> </inline-formula> – <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">V</tex-math> </inline-formula> response in dark and under illumination conditions. It was found that the device displayed remarkable sensitivity to ultraviolet (UV) light exposure, owing to a responsivity of 35 mA <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">⋅</tex-math> </inline-formula> W <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">-1</tex-math> </inline-formula> , with notable reproducibility. What is more, the structure demonstrates an open-circuit voltage, short-circuit current density, and ideality factor of 0.28 V, 237.2 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">μ</tex-math> </inline-formula> A <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">⋅</tex-math> </inline-formula> cm <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">-2</tex-math> </inline-formula> , and 2.3, respectively. The origin of the ZnO/PVK photoconductive properties is explained using the carrier transport mechanism at the interfaces. Moreover, the photoelectrical parameters of the PVK/ZnO NR structure were precisely evaluated through a combined physical–mathematical–numerical approach to unravel the physical mechanisms governing the operation of such PDs. The results of this research reveal promising avenues for flexible and highly sensitive PDs, opening wide potential applications in advanced communication systems, and/or environmental monitoring.