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Development of Reliable and High Responsivity ZnO-Based UV-C Photodetector

2019/12/04 by Jitesh Agrawal, Tejendra Dixit, I. A. Palani +1 · 4 citations
Materials Science · Engineering · #Ga2O3 and related materials #ZnO doping and properties #Gas Sensing Nanomaterials and Sensors

paper · doi:10.1109/jqe.2019.2957584

Abstract

This work is focused on the development of reliable and high-performance ZnO based deep UV (UV-C) photodetectors. Herein, hydrothermally synthesized ZnO honeycomb nanostructures were utilized to develop a high sensitivity UV-C photodetector. A systematic analysis of the device performance and stability in deep UV (250 nm) radiations has been performed. The as-synthesized device has shown high sensitivity of 2.4 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> and responsivity of 597 A/W, at 20 V applied bias. Further, we have demonstrated that the coating of Pt nanoparticles over ZnO nanostructures could significantly improve not only the device stability but also the response speed and device endurance in deep UV radiations. The proposed device is a promising contender for future deep UV detector based optoelectronic products.

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