Modeling of Phase-Change Memory: Nucleation, Growth, and Amorphization Dynamics During Set and Reset: Part I—Effective Media Approximation

2017/09/08 by Zachary Woods, Ali Gokirmak · 32 citations
Engineering · Materials Science · #Algorithm #Chalcogenide Semiconductor Thin Films #Computer science #Nucleation #Phase-change materials and chalcogenides #Physics #Reset (finance) #Set (abstract data type) #Thermodynamics #Transition Metal Oxide Nanomaterials

paper · doi:10.1109/ted.2017.2745506

published in IEEE Transactions on Electron Devices 64(11), 4466-4471 (Institute of Electrical and Electronics Engineers)

openalex publication_date 2017/09/08 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/29

Abstract

We have constructed a framework that enables finite-element modeling of nucleation, growth, and amorphization processes in phase-change memory devices using a single rate equation that tracks evolution of local crystal density at each mesh point. The rate equation, current continuity equation, and Fourier heat transfer equation are solved simultaneously to perform electro-thermal simulations that capture the device dynamics during set and reset operations. The functionality of this framework is demonstrated through simulation of various set and reset operations and consecutive set/reset cycles of a mushroom cell using temperature and crystallinity dependent parameters for Ge2Sb2Te5.

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• A device-level compact model for mushroom-type phase change memory

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