FinFET-a self-aligned double-gate MOSFET scalable to 20 nm

2000/01/01 by Chenming Hu, Jeffrey Bokor, J. Bokor +13 · 1,659 citations
Engineering · #Advancements in Semiconductor Devices and Circuit Design #Computer science #Double gate #Electrical engineering #Electronic engineering #Engineering #Logic gate #MOSFET #Materials science #Optoelectronics #Planar #Semiconductor materials and devices #Short-channel effect #Silicon Carbide Semiconductor Technologies #Threshold voltage #Transistor #Voltage

paper · doi:10.1109/16.887014

published in IEEE Transactions on Electron Devices 47(12), 2320-2325 (Institute of Electrical and Electronics Engineers)

openalex publication_date 2000/01/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/04

Abstract

MOSFETs with gate length down to 17 nm are reported. To suppress the short channel effect, a novel self-aligned double-gate MOSFET, FinFET, is proposed. By using boron-doped Si/sub 0.4/Ge/sub 0.6/ as a gate material, the desired threshold voltage was achieved for the ultrathin body device. The quasiplanar nature of this new variant of the vertical double-gate MOSFETs can be fabricated relatively easily using the conventional planar MOSFET process technologies.

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