2005/08/01 by V. Chiochia, M. Swartz, D. Bortoletto +17 · 1 citation
Engineering · Physics and Astronomy · #CCD and CMOS Imaging Sensors #Particle Detector Development and Performance #Radiation Detection and Scintillator Technologies
paper · doi:10.1109/tns.2005.852748
crossref issued 2005/08/01 · crossref published 2005/08/01 · crossref published-print 2005/08/01 · openalex publication_date 2005/08/01 · crossref created 2005/08/16 · openalex created_date 2020/11/23 · crossref deposited 2025/03/29 · crossref indexed 2026/07/29 · openalex updated_date 2026/07/29
Charge collection measurements performed on heavily irradiated p-spray DOFZ pixel sensors with a grazing angle hadron beam provide a sensitive determination of the electric field within the detectors. The data are compared with a complete charge transport simulation of the sensor which includes free carrier trapping and charge induction effects. A linearly varying electric field based upon the standard picture of a constant type-inverted effective doping density is inconsistent with the data. A two-trap double junction model implemented in the ISE TCAD software can be tuned to produce a double peak electric field which describes the data reasonably well. The modeled field differs somewhat from previous determinations based upon the transient current technique. The model can also account for the level of charge trapping observed in the data.