2009/08/01 by Hiroyuki Shiraki, Minoru Funaki, Yukio Ando +4
Engineering · #Advanced Semiconductor Detectors and Materials #Chalcogenide Semiconductor Thin Films #Thermography and Photoacoustic Techniques
paper · doi:10.1109/tns.2009.2016843
crossref issued 2009/08/01 · crossref published 2009/08/01 · crossref published-print 2009/08/01 · openalex publication_date 2009/08/01 · crossref created 2009/08/24 · crossref deposited 2021/10/11 · openalex created_date 2025/10/10 · crossref indexed 2026/07/29 · openalex updated_date 2026/07/30
The THM growth technology for 100 mm diameter CdTe single crystals has been intensively developed. In consequence of the optimization of growth conditions, we have succeeded in controlling growth interface shape and growing 100 mm diameter CdTe single crystals with 300 mm in length. Concerning the behavior of Te inclusions in the grown crystal, their size and density were investigated by IR transmission microscopy. The size distribution of Te inclusions was divided into two groups, and the density of them was less than 1 times 105cm-3. Charge transport properties of the grown crystal were investigated by using the ldquomutau-modelrdquo spectral fitting method, and were found to be quite uniform all over the wafer. To investigate the homogeneity of radiation detector performances, Ohmic type and Schottky type detectors with 4 mm times 4 mm times 1 mm were fabricated from the left half and the right half of the 100 mm diameter wafer, respectively. Standard deviations of their energy resolutions for the 122 keV line from57Co were less than 6%. This excellent uniformity is essential for the room temperature semiconductor detectors in the major application areas, such as medical imaging, non-destructive inspection and homeland security.