2012/06/05 by Matthew C. Veale, Steven Bell, Steven J. Bell +15
Engineering · Physics and Astronomy · #Advanced Semiconductor Detectors and Materials #Advanced X-ray and CT Imaging #Radiation Detection and Scintillator Technologies
paper · doi:10.1109/tns.2012.2197025
openalex publication_date 2012/06/05 · crossref created 2012/06/05 · crossref issued 2012/08/01 · crossref published 2012/08/01 · crossref published-print 2012/08/01 · crossref deposited 2017/11/14 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/29 · crossref indexed 2026/07/29
Segmentation of the anode-side of a\rm M\mathchar"702D π \mathchar"702D \rm nCdTe diode produces detectors with excellent spatial and energy resolution while maintaining an active area that extends to the detector edge. The CdTe pixel detectors reported have 250 ìm pitch, a detector thicknesses of 1 mm and are bonded to a spectroscopic readout ASIC. The results from an edgeless\rm M\mathchar"702D π \mathchar"702D \rm nCdTe detector with indium-diffused anodes, produced via diamond blade segmentation, are compared to those of a CdTe Schottky pixel detector with aluminium anodes and guard band produced using standard photolithographic techniques. The energy resolution at 59.54 keV was measured to be 1.4% and 1.3% for the standard and edgeless detector respectively. The spectroscopic performance of pixels located at the detector edges are discussed with reference to TCAD simulations and X-ray micro-beam measurements.