Signal generation in CdTe X-ray sensors

2020/05/19 by O. Grimm, Grimm, Oliver · 1 citation
Engineering · Physics and Astronomy · #Advanced Semiconductor Detectors and Materials #Advanced X-ray and CT Imaging #FOS: Physical sciences #Instrumentation and Detectors (physics.ins-det) #Particle Detector Development and Performance

paper · pdf · doi:10.48550/arxiv.2005.09264

openalex publication_date 2020/05/19 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

This write-up explains the signal generation mechanism in CdTe semiconductor sensors. Derivations are mostly carried out explicitly, starting with basic semiconductor relations. The analysis is largely applicable to any semiconductor, with the focus being on the Schottky-type CdTe:Cl sensors that are employed in the Spectrometer/Telescope for Imaging X-rays (STIX) instrument on-board the ESA Solar Orbiter mission.

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• First-principles response simulation of wide-gap CdTe-DSDs for the FOXSI solar sounding rocket experiment

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