2008/12/01 by M. Mazzillo, Massimo Mazzillo, Alessandro Piazza +18
Chemical Engineering · Physics and Astronomy · #Advanced Optical Sensing Technologies #Analytical Chemistry and Sensors #Radiation Detection and Scintillator Technologies
paper · doi:10.1109/tns.2008.2007483
crossref issued 2008/12/01 · crossref published 2008/12/01 · crossref published-print 2008/12/01 · openalex publication_date 2008/12/01 · crossref created 2009/01/20 · crossref deposited 2022/01/12 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/29 · crossref indexed 2026/07/30
The fabrication of silicon shallow junction photodiodes is a relevant topic for the detection of blue and near ultraviolet weak photon fluxes. In this paper we present a simple model to calculate the quantum detection efficiency (QDE) of a Geiger mode avalanche photodiode (GMAP) as a function of the dead layer thickness above the junction depletion layer. A comparison between calculated and experimental data is also presented. Moreover, by using the same model, an analysis of the QDE at 420 nm wavelength of conventional GMAPs based on shallow N+-P and P+-N junctions is given.