2008/08/19 by H. Otono, Otono, H., H. Oide +14
Engineering · Physics and Astronomy · #Advanced Optical Sensing Technologies #CCD and CMOS Imaging Sensors #FOS: Physical sciences #High Energy Physics - Experiment (hep-ex) #Instrumentation and Detectors (physics.ins-det) #Radiation Detection and Scintillator Technologies #hep-ex #physics.ins-det
paper · pdf · doi:10.48550/arxiv.0808.2541
6pages, 7figures, submitted to Nucl. Instru. Methods, A
arxiv created 2008/08/19 · openalex publication_date 2008/08/19 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
In the 1990s, a novel semiconductor photon-sensor operated in Geiger-mode was invented in Russia (Silicon PhotoMultiplier), which consists of many tiny pixels and has a single photon level sensitivity. Since then, various types of the sensor with this scheme, Pixelized Photon Detectors (PPD), have been developed in many places in the world. For instance, Hamamatsu Photonics K.K. in Japan produces the PPD as a Multi-Pixel Photon Counter. While the internal mechanisms of the PPD have been intensively studied in recent years, the existing models do not succeeded to fully reproduce the output characteristic, such as waveforms at low temperature. We have developed a new model with the transient multiplication and quenching of the realistic avalanche process and have succeeded in reproducing the output waveform of the PPD at various temperature. In this paper, we discuss our improved model.