1995/07/01 by Hitoshi Sasaki, Atsushi Ikari, Kazutaka Terashima +1 · 1 voice
Engineering · Materials Science · #Magnetic Properties and Applications #Silicon and Solar Cell Technologies #Thermodynamic and Structural Properties of Metals and Alloys
paper · doi:10.1143/jjap.34.3426
openalex publication_date 1995/07/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/06/11
The temperature dependence of the electrical resistivity of molten silicon was measured based on the direct-current four-probe method in the temperature range from the melting point (1,415° C) to 1,630° C. The variation of the resistivity in this temperature region was less than 0.7%, which is much smaller than previously reported values. The measured resistivity near the solodification point was about 72×10 -6 Ω cm, which is about 8% smaller than previously reported values. The resistivity of molten silicon showed a local minimum in the range from 1,450° C to 1,500° C. The resistivity of molten silicon was calculated based on Ziman's formula. The temperature dependence of the measured resistivity was not reproduced when the structure factor S ( Q ) calculated by a simple hard-sphere model was substituted into Ziman's formula, but was reproduced by using the experimental data of S ( Q ) measured by Waseda which shows the first peak of asymmetric shape. This result suggests that the specific melt structure of molten silicon has a significant effect on the resistivity.