2003/03/10 by Yu. I. Bogdanov, N. A. Bogdanova, V. L. Dshkhunyan
Physics and Astronomy · #physics.data-an #cond-mat.stat-mech
published as Russian Microelectronics, 2003, V.32, N 1, P. 51 · OAO Angstrem, Moscow Institute of Electronic Engineering (Technical University), Moscow, Russia, 19 pages, 2 figures
arxiv created 2003/03/10 · arxiv updated 2009/11/30
A hierarchical approach to the construction of compound distributions for process-induced faults in IC manufacture is proposed. Within this framework, the negative binomial distribution and the compound binomial distribution are treated as level-1 models. The hierarchical approach to fault distribution offers an integrated picture of how fault density varies from region to region within a wafer, from wafer to wafer within a batch, and so on. A theory of compound-distribution hierarchies is developed by means of generating functions. With respect to applications, hierarchies of yield means and yield probability-density functions are considered and an in-process measure of yield loss is introduced. It is shown that the hierarchical approach naturally embraces the Bayesian approach.