Phase Change Memory
2010/11/05 by H.-S. Philip Wong, H.‐S. Philip Wong, Simone Raoux +7 · 1,790 citations
Engineering · Materials Science · #Advanced Memory and Neural Computing #Computer science #Electronic engineering #Engineering #Engineering physics #Materials science #Phase change #Phase-change material #Phase-change materials and chalcogenides #Phase-change memory #Physics #Reliability (semiconductor) #Scalability #Scaling #Transition Metal Oxide Nanomaterials
paper · doi:10.1109/jproc.2010.2070050
published in Proceedings of the IEEE 98(12), 2201-2227 (Institute of Electrical and Electronics Engineers)
openalex publication_date 2010/11/05 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/03
Abstract
In this paper, recent progress of phase change memory (PCM) is reviewed. The electrical and thermal properties of phase change materials are surveyed with a focus on the scalability of the materials and their impact on device design. Innovations in the device structure, memory cell selector, and strategies for achieving multibit operation and 3-D, multilayer high-density memory arrays are described. The scaling properties of PCM are illustrated with recent experimental results using special device test structures and novel material synthesis. Factors affecting the reliability of PCM are discussed.
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