2021/09/10 by Jian-Wei Su, Xin Si, Yen-Chi Chou +27 · 2 citations
Engineering · #Advanced Memory and Neural Computing #Ferroelectric and Negative Capacitance Devices #Semiconductor materials and devices
paper · doi:10.1109/jssc.2021.3108344
Computing-in-memory (CIM) based on SRAM is a promising approach to achieving energy-efficient multiply-and-accumulate (MAC) operations in artificial intelligence (AI) edge devices; however, existing SRAM-CIM chips support only DNN inference. The flow of training data requires that CIM arrays perform convolutional computation using transposed weight matrices. This article presents a two-way transpose (TWT) multiply cell with high resistance to process variation and a novel read scheme that uses input-aware zone prediction of maximum partial MAC values to enhance the signal margin for robust readout. A 28-nm 64-kb TWT CIM macro fabricated using foundry-provided compact 6T-SRAM cells achieved <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">T_\text AC </tex-math></inline-formula> of 3.8–21 ns and energy efficiency of 7–61.1 TOPS/W in performing MAC operations using 2–8-b inputs, 4–8-b weights, and 10–20-b outputs.