2005/01/31 by Ying Zhang, S. Das Sarma
Physics and Astronomy · #cond-mat.mtrl-sci
paper · pdf · doi:10.1103/physrevb.72.125303
published as Phys. Rev. B 72, 125303 (2005) · Revised version
arxiv created 2005/09/14 · arxiv updated 2009/12/01
We calculate the Coulomb interaction induced density, temperature and magnetization dependent many-body band-gap renormalization in a typical diluted magnetic semiconductor GaMnAs in the optimally-doped metallic regime as a function of carrier density and temperature. We find a large (about 0.1 eV) band gap renormalization which is enhanced by the ferromagnetic transition. We also calculate the impurity scattering effect on the gap narrowing. We suggest that the temperature, magnetization, and density dependent band gap renormalization could be used as an experimental probe to determine the valence band or the impurity band nature of carrier ferromagnetism.