2001/11/03 by Mona Berciu, Berciu, Mona, R. N. Bhatt +1
Materials Science · Physics and Astronomy · #Disordered Systems and Neural Networks (cond-mat.dis-nn) #FOS: Physical sciences #Magnetic Properties and Applications #Magnetic properties of thin films #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Semiconductor Quantum Structures and Devices #cond-mat.dis-nn #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.cond-mat/0111045
13 pages + 16 figures
arxiv created 2001/11/03 · openalex publication_date 2001/11/03 · arxiv updated 2009/11/30 · openalex created_date 2019/06/27 · openalex updated_date 2026/07/28
We present a detailed study, within the mean-field approximation, of an impurity band model for III-V diluted magnetic semiconductors. Such a model should be relevant at low carrier densities, below and near the metal-insulator transition. Positional disorder of the magnetic impurities inside the host semiconductor is shown to have observable consequences for the shape of the magnetization curve. Below the critical temperature the magnetization is spatially inhomogeneous, leading to very unusual temperature dependence of the average magnetization as well as specific heat. Disorder is also found to enhance the ferromagnetic transition temperature. Unusual spin and charge transport is implied.