Single-shot read-out of an individual electron spin in a quantum dot
2004/07/01 by J. M. Elzerman, Ronald Hanson, R. Hanson +6 · 164 citations
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #cond-mat.mes-hall
paper · pdf · doi:10.1038/nature02693
published as extended version of Nature 430, 431-435 (2004) · 13 pages, 7 figures
openalex publication_date 2004/07/01 · arxiv created 2004/11/19 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/31
Abstract
Spin is a fundamental property of all elementary particles. Classically it can be viewed as a tiny magnetic moment, but a measurement of an electron spin along the direction of an external magnetic field can have only two outcomes: parallel or anti-parallel to the field. This discreteness reflects the quantum mechanical nature of spin. Ensembles of many spins have found diverse applications ranging from magnetic resonance imaging to magneto-electronic devices, while individual spins are considered as carriers for quantum information. Read-out of single spin states has been achieved using optical techniques, and is within reach of magnetic resonance force microscopy. However, electrical read-out of single spins has so far remained elusive. Here, we demonstrate electrical single-shot measurement of the state of an individual electron spin in a semiconductor quantum dot. We use spin-to-charge conversion of a single electron confined in the dot, and detect the single-electron charge using a quantum point contact; the spin measurement visibility is ~65%. Furthermore, we observe very long single-spin energy relaxation times (up to 0.85 ms at a magnetic field of 8 Tesla), which are encouraging for the use of electron spins as carriers of quantum information.
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