Laser-Assisted Deposition of r-B4C Coatings Using Ethylene as Carbon Precursor

2002/10/18 by M. J. Santos, A. J. Silvestre, O. Conde
Physics and Astronomy · #cond-mat.mtrl-sci

paper · pdf

published as Surface and Coatings Technology 151-152 (2002) 160 · 10 pages, 4 figures

arxiv created 2002/10/18 · arxiv updated 2009/11/30

Abstract

Rhombohedral B4C coatings were synthesised on fused silica substrates by CO2 laser-assisted chemical vapour deposition (LCVD), using a dynamic reactive atmosphere of BCl3, C2H4 and H2. Films with carbon content from 15 to 22 at.% were grown at deposition rates as high as 0.12 micrometers per second. The kinetics of the reactive system used to deposit the B4C films and the influence of growth conditions on the structure and morphology of the deposits were investigated. Keywords: Rhombohedral boron carbide (r-B4C), Laser-CVD, growth kinetics.

Related

• The Role of Carbon Precursor on Boron Carbide Synthesis by Laser-CVD
• Influence of Carbon Content on the Crystallographic Structure of Boron Carbide Films
• Increase of the wear resistance of carbide layers deposited by Pulsed Laser Deposition in addition with an auxiliary laser
• Epitaxial Growth of Boron Carbide on 4H-SiC
• Mechanical and Surface Characterization of Diamond-Like Carbon Coatings onto Polymeric Substrate