1987/06/01 by A E Drakin, A. Drakin, P. Eliseev +8
Physics and Astronomy · Engineering · #Semiconductor Quantum Structures and Devices #Semiconductor Lasers and Optical Devices #Advanced Semiconductor Detectors and Materials
paper · doi:10.1109/jqe.1987.1073467
Double heterojunction structures of InGaSbAs/GaAl-SbAs emitting at 300 K in the wide wavelength range of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1.8-2.4 μ</tex> m have been prepared by the LPE technique on gallium antimonide