2026/01/01 by Huan Liu, Haiyun Huang, Heng Yu +12 · 1 voice
Engineering · Materials Science · #Metamaterials and Metasurfaces Applications #Silicon Nanostructures and Photoluminescence #Terahertz technology and applications
paper · pdf · doi:10.29026/oea.2026.250217
openalex publication_date 2026/01/01 · openalex created_date 2026/03/31 · openalex updated_date 2026/07/31
Unveiling the vacancy oscillation mode in amorphous binary oxides films at nanoscale and its impact on ionic conductivity and conductivity spectra is vital to explore the tightly intertwined connection between reversible oxygen migration and stabilizing and controlling the ferroelectric behavior, to complement traditional ferroelectric doped-HfO<sub>2</sub> materials. Using terahertz time-domain spectroscopy (THz-TDS), infrared reflection spectra, and density functional theory (DFT) calculations, we investigate the optical absorption and reflection spectra of crystalline and amorphous ZrO<sub>2</sub> thin film by varying oxygen vacancy concentrations. Experimental results show that oxygen vacancy migration rather than intrinsic paraelectric nature in films significantly affect the conductivity and polarization behavior of ZrO<sub>2</sub> thin film. Notably, except for the phonon modes induce distinct absorption peaks around 11 THz, additional absorption peaks are observed in the 1–2 THz range, which are caused by localized states originated from the oxygen vacancies, supported by DFT calculations. Temperature-dependent ion migration behavior further confirms the role of vacancy oscillation modes in ionic conductivity. DFT calculations additionally reveal how oxygen vacancies alter infrared absorption and optical modes, leading to a redshift in existing absorption peaks or the introduction of new peaks. Our findings unambiguously clarify the oxygen voltammetry characteristics in amorphous ferroelectric binary oxides films. Furthermore, the strategic deployment of amorphous binary oxides films enables the use of low-temperature atomic layer deposition (ALD) growing process, effectively alleviating routing congestion of ferroelectric oxides and offering additional design flexibility for future memory devices with ultra-low effective oxide thickness (EOT) and low thermal budget, and providing alternative technological routes that are poised to propel the development of next-generation more compact ferroelectric devices for advanced process nodes.