2020/08/10 by Brijesh Kumar Yadav, Pratima Singh, Chandreshvar Prasad Yadav +2
Engineering · Materials Science · #Chalcogenide Semiconductor Thin Films #Phase-change materials and chalcogenides #Quantum Dots Synthesis And Properties
paper · doi:10.1515/zna-2020-0098
openalex publication_date 2020/08/10 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Abstract The present work encloses structural and optical characterization of copper (I) selenide (Cu 2 Se) thin films. The films having thickness 85 nm have been deposited using thermal evaporation technique in initial step of work. The structural and morphological studies of deposited thin films are then done by X-ray diffraction (XRD), scanning electron microscope (SEM), and surface profilometer measurements. Later on, ultraviolet-visible-near-infrared (UV-VIS-NIR) spectrophotometer and Raman spectroscopic measurements are performed for optical characterization of films. The structure and morphology measurements reveal that deposited material of films is crystalline. The optical band gap estimated from the optical transmission spectra of the film has been found 1.90 eV. The mean values of refractive index, extinction coefficient, real and imaginary dielectric constant are received 3.035, 0.594, 9.623, and 3.598, respectively. The obtained results are compared and analyzed for justification and application of Cu 2 Se thin films.