Weak Absorption Tails in Amorphous Semiconductors

1972/04/15 by D. L. Wood, J. Tauc · 4 citations
Materials Science · Physics and Astronomy · #Glass properties and applications #Optical properties and cooling technologies in crystalline materials #Phase-change materials and chalcogenides

paper · doi:10.1103/physrevb.5.3144

openalex publication_date 1972/04/15 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/27

Abstract

Optical absorption measurements near the absorption edge are presented for three bulk semiconductor glasses: As₂S₃, Ge₃₃As₁₂Se₅₅, and Ge₂₈Sb₁₂Se₆₀. The weak absorption tails observed below the exponential part of the edge also follow an exponential law, and they are not due to a light-scattering artifact. We associate them with localized states in the band gap. The results are interpreted in terms of a model in which optical transitions occur between localized states below the mobility edge and extended states of the opposite band.

Cited by

• Conventional and cryo-synchronous luminescence spectra of orthorhombic calcium titanate
• Surface and grain boundary passivation using tetraphenylethylene derivative for high-performance perovskite solar cell
• Thermoelectric power factor of La 0.9 M 0.1 FeO 3 (M = Ca and Ba) system: Structural, band gap and electrical transport evaluations
• Effect of Fluorine doping on the electrocatalytic properties of Nb2O5 for H2O2 electrogeneration

Related

• Photoinduced effects and metastability in amorphous semiconductors and insulators
• Structural origin of the midgap electronic states and the Urbach tail in pnictogen-chalcogenide glasses
• Model for the Electronic Structure of Amorphous Semiconductors
• Far tails of the density of states in amorphous organic semiconductors
• Effect of Dispersion and Different Carrier Transitions on Absorption Characteristics of GaAs