Model for the Electronic Structure of Amorphous Semiconductors

1975/04/14 by P. W. Anderson · 7 citations
Materials Science · Physics and Astronomy · #Glass properties and applications #Phase-change materials and chalcogenides #Optical properties and cooling technologies in crystalline materials

paper · doi:10.1103/physrevlett.34.953

Abstract

It is pointed out that a model which agrees well with the observed properties of semiconducting glasses is an attractive Hubbard model of localized states. Such a model has no gap for two-electron excitations but an energy gap for one-electron ones. The suggested physical model for a two-electron excitation is a new covalent bond in the structure, which is severely localized. It is also proposed that the one-electron excitation spectrum is wholly, or almost wholly, extended, and all observed gaps are identical with the mobility gap.

Cited by

• Pair Tunneling through Single Molecules
• First-principles theory of dilute magnetic semiconductors
• Hartree-Fock study of the Anderson model coupled to a boson field; mixed valence states
• Frequency-tunable nano-oscillator based on Ovonic Threshold Switch (OTS)
• Two-electron F' centers in alkali halides: A negative-U analysis
• Enhanced superconductivity in ultrathin FeSe films on SrTiO3 via resonant anti-shielding: Superconductivity meets superfluidity
• Electron Localization Enhances Cation Diffusion in Reduced ZrO2, CeO2 and BaTiO3

Related

• The Microscopic Quantum Theory of Low Temperature Amorphous Solids
• Thermodynamics and transport properties of interacting systems with localized electrons
• Simulation of the physical properties of the chalcogenide glass As₂S₃ using a density-functional-based tight-binding method
• Effective bands and band-like electron transport in amorphous solids
• Structural origin of the midgap electronic states and the Urbach tail in pnictogen-chalcogenide glasses