Fabrication of p+-Si/p-diamond heterojunction diodes and effects of thermal annealing on their electrical properties

2021/10/22 by Yota Uehigashi, Shinya Ohmagari, Hitoshi Umezawa +3 · 1 citation
Engineering · Materials Science · #Diamond and Carbon-based Materials Research #Integrated Circuits and Semiconductor Failure Analysis #Semiconductor materials and devices

paper · doi:10.1016/j.diamond.2021.108665

openalex publication_date 2021/10/22 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/30

Citations

• Physics of Semiconductor Devices
• Annealing effect of surface-activated bonded diamond/Si interface

Cited by

• Electrical properties of Si/diamond heterojunction diodes fabricated by using surface activated bonding