Electrical properties of Si/diamond heterojunction diodes fabricated by using surface activated bonding

2022/10/05 by Yota Uehigashi, Shinya Ohmagari, Hitoshi Umezawa +3
Engineering · Materials Science · #Diamond and Carbon-based Materials Research #Integrated Circuits and Semiconductor Failure Analysis #Semiconductor materials and devices

paper · doi:10.1016/j.diamond.2022.109425

openalex publication_date 2022/10/05 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/30

Citations

• Physics of Semiconductor Devices
• Annealing effect of surface-activated bonded diamond/Si interface
• Fabrication of p+-Si/p-diamond heterojunction diodes and effects of thermal annealing on their electrical properties