Comparison of Cavities Formed in Single Crystalline and Polycrystalline α-SiC after H Implantation

2020/07/01 by Qing Liao, Long Kang, Tongmin Zhang +11
Engineering · Materials Science · #Advanced ceramic materials synthesis #Semiconductor materials and devices #Silicon Carbide Semiconductor Technologies

paper · doi:10.1088/0256-307x/37/7/076102

openalex publication_date 2020/07/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

Cavities and extended defects formed in single crystalline and polycrystalline α -SiC implanted with H + ions are compared. The samples are investigated by cross-sectional transmission electron microscopy. H 2 bubbles are formed during H implantation and H 2 molecules escape the sample to form cavities during thermal annealing at 1100°C. Microcracks and the extended defects prefer to nucleate in single crystalline α -SiC, but not polycrystalline α -SiC. Grain boundaries can account for the experimental results. The formation of cavities on grain boundaries is investigated.

Citations

• Handbook of SiC properties for fuel performance modeling

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