2025/12/30 by Wang Zhen-jin, Zhen-Jin Wang, Xin-Liang Ye +5
Physics and Astronomy · Materials Science · #GaN-based semiconductor devices and materials #Semiconductor Quantum Structures and Devices #Silicon Nanostructures and Photoluminescence
paper · doi:10.1142/s0217984926400026
This study examines the effect of varying the number of multiple quantum wells (MQWs) in aluminum gallium indium phosphide (AlGaInP)-based micro light-emitting diodes (Micro-LEDs) on their optoelectronic performance. Three device structures were fabricated with 3, 7, and 15 MQW pairs to identify the optimal configuration. For the LED with 3 MQW pairs, the light output power reached 0.139[Formula: see text]mW, and the peak external quantum efficiency (EQE) was 20.66% at a current density of 10[Formula: see text]A/cm 2 . The results indicate that, in the 3-MQW design, dopants from the p-type and n-type semiconductor layers can reach the active region over a shorter distance, thereby reducing non-radiative recombination. These findings provide valuable guidance for optimizing the design and performance of AlGaInP Micro-LEDs, offering insights for future applications in green energy and advanced display technologies.