2024/11/24 by Mohammad Amirul Hairol Aman, Nurul Fathinah Azrisham, Aman, Mohammad Amirul Hairol +6
Engineering · Materials Science · Physics and Astronomy · #Applied Physics (physics.app-ph) #Computational Physics (physics.comp-ph) #FOS: Physical sciences #Ga2O3 and related materials #GaN-based semiconductor devices and materials #Optics (physics.optics) #Semiconductor materials and devices
paper · pdf · doi:10.48550/arxiv.2411.15855
openalex publication_date 2024/11/24 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Low internal and external quantum efficiencies in high Aluminium content AlGaN-based deep-ultraviolet light-emitting diode (DUV-LED) occurred due to strong polarization effects, spontaneous and piezoelectric polarization, at the interface between two materials. It also leads to a low carrier confinement and Quantum Confined Stark Effect (QCSE), contributing to the efficiency droop of the DUV-LED. This work demonstrates an under-level MQW configuration implemented in a DUV-LED with a 257 nm emission wavelength. Three DUV-LED structures, above-, same- and under-level MQW were investigated, covering important optoelectronics properties such as energy band diagram, carrier concentrations, radiative recombination rates and electric field distribution. It is found that the quantum efficiencies, luminescence intensity and light output power of the under-level configuration has been enhanced by nine-, ten- and five-folds, relative to the above-level MQW configuration.