2016/09/25 by Morteza Rahimiana, Rahimiana, Morteza, Morteza Fathipour +1
Engineering · #Advancements in Semiconductor Devices and Circuit Design #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Nanowire Synthesis and Applications #Semiconductor materials and devices
paper · pdf · doi:10.48550/arxiv.1609.08150
openalex publication_date 2016/09/25 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
In this paper we study the device physics of a technique for realizing an\nn-p-n bipolar transistor action in the source side of a junctionless nanowire\ntunneling FET (BJN-TFET). In the on-state, tunneling of electrons from valence\nband of the source to conduction band of the channel enhances the hole\nconcentration as well as the potential in the source region which drives a\nbuilt-in BJT transistor by forward biasing the base-emitter junction, with the\nsource acting as a p-type region. Owing to the sharp switching of the JN-TFET\nand high BJT current gain, the overall performance is improved, including\nfavorable high on-state current (2.17*10-6 A/um), and sub 60 mV/dec\nsubthreshold swing (~ 50 mV/dec) at low supply voltages. This approach modifies\nthe current mechanism owning to the triggered BJT and makes the proposed\nstructure more attractive for scaling requirements in future low power\napplication.\n