2024/12/23 by Rajabi, Behzad, Vadizadeh, Mahdi, Sedigh Ziabari, Seyed Ali
#Heterojunction #Nonlocal BTBT #TFET #Transconductance #Work function
paper · doi:10.57647/j.ijnd.2025.1602.13
This paper introduces a nanotube heterojunctionless tunneling field-effect transistor (NT-HJLTFET) that combines core-shell gate technology with a Ga0.8In0.2As/Ga0.85In0.15Sb heterojunction to enhance device performance. The NT-HJLTFET achieves an ION/IOFF ratio of 9.84×10¹³, an average subthreshold slope (SS) of 9.4 mV/dec, ION of 6.4 mA, transconductance (gm) of 17.5 mS, and unit gain cutoff frequency (fT) of 42.7 THz. These results represent a significant improvement in performance, including a nearly two orders of magnitude increase in ION, gm, and fT compared to silicon-based nanotube junctionless tunneling field-effect transistor (NT-JLTFET). The NT-HJLTFET also exhibits a five orders of magnitude enhancement in ION/IOFF and a 76% improvement in SS. Additionally, the presence of defects is shown to decrease fT, impacting the device's high-frequency response. These findings suggest that the NT-HJLTFET is a promising candidate for use in both digital and analog applications in integrated circuits.