Solid state defect emitters with no electrical activity

2023/10/15 by Pei Li, Li Song, Li, Pei +7 · 1 citation
Engineering · #Semiconductor materials and devices #Advancements in Semiconductor Devices and Circuit Design #Silicon Carbide Semiconductor Technologies

paper · pdf · doi:10.48550/arxiv.2310.09849

Abstract

Point defects may introduce defect levels into the fundamental band gap of the host semiconductors that alter the electrical properties of the material. As a consequence, the in-gap defect levels and states automatically lower the threshold energy of optical excitation associated with the optical gap of the host semiconductor. It is, therefore, a common assumption that solid state defect emitters in semiconductors ultimately alter the conductivity of the host. Here we demonstrate on a particular defect in 4H silicon carbide that a yet unrecognized class of point defects exists which are optically active but electrically inactive in the ground state.

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