Electrically active defects in 3C, 4H and 6H silicon carbide polytypes: A review

2025/02/20 by Capan, Ivana · 2 citations
#FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci)

paper · doi:10.48550/arxiv.2502.14426

Abstract

This paper aims to critically review electrically active defects studied by junction spectroscopy techniques (deep-level transient spectroscopy and minority carrier transient spectroscopy) in the three most commonly used silicon carbide (SiC) polytypes: 3C-SiC, 4H-SiC, and 6H-SiC.

Cited by

• High-Field EPR/ENDOR of N/Be Centers for Defect Engineering in 6H-SiC
• Characterisation of Crystalline Defects in 4H Silicon Carbide using DLTS and TSC

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