2007/08/30 by H. Diedrich, Diedrich, H., R. Liberati +1
Engineering · Physics and Astronomy · #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Other Condensed Matter (cond-mat.other) #Silicon and Solar Cell Technologies #cond-mat.mtrl-sci #cond-mat.other
paper · pdf · doi:10.48550/arxiv.0708.4080
8 pages, 5 figures
arxiv created 2007/08/30 · openalex publication_date 2007/08/30 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
The thermal characteristics of silicon between 15 and 300 deg K are investigated by applying a computer program on the solution of the differential heat diffusion equation. The computer model is linked to high-purity silicon through a set of experimental data. The numerical results are given in graphic form and show, in particular, very short diffusion transit times across long distances. The computed figures require experimental confrontations; a test set-up is proposed.