2025/12/10 by Guangying Wang, Wang, Guangying, Shuwen Xie +22
Engineering · Materials Science · Physics and Astronomy · #Applied Physics (physics.app-ph) #FOS: Physical sciences #Ga2O3 and related materials #GaN-based semiconductor devices and materials #Materials Science (cond-mat.mtrl-sci) #Semiconductor materials and devices
paper · pdf · doi:10.48550/arxiv.2512.09294
openalex publication_date 2025/12/10 · openalex created_date 2025/12/12 · openalex updated_date 2026/08/02
Solid-phase epitaxy (SPE) of beta-Ga2O3 thin films by radio-frequency (RF) sputtering and then crystallized through high-temperature post-deposition annealing is employed on sapphire substrates, yielding a high-quality pseudo-substrate for subsequent buffer growth via MOCVD and LPCVD. Low roughness (<0.5 nm) and sharp single-crystalline diffraction peaks corresponding to the (-201), (-402), and (-603) reflections of beta-Ga2O3 were observed in the SPE beta-Ga2O3 film and the subsequent epitaxial buffer layer. N-doped Ga2O3 film on SPE Ga2O3 film grown by LPCVD showed step-assisted growth mode with reasonable electronic behavior with 45 cm2/V-s mobility at a bulk carrier concentration of 1.3e17 cm-3. These results suggest that SPE Ga2O3 is a promising pathway to advance the development of beta-Ga2O3 on foreign substrates.